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摻雜SGG晶體的生長+文獻綜述

時間:2019-06-08 08:10來源:畢業論文
同一家族中的鍺酸鎵鍶(Sr3Ga2Ge4O14,簡稱 SGG)晶體熔點比LGS 低 100℃,有利于坩堝下降法生長。 坩堝下降法是通過把坩堝從爐內的高溫區域下移到較低溫度區域從而使熔體過冷結晶

摘要:晶體材料應用于許多領域,隨著時代的發展,對晶體材料的需求也逐漸增加,所以人們不斷地探索晶體的材料、生長方法。1982年,前蘇聯的科學家 A.A. Kaminsky 首先報道了摻 Nd3+的 LGS 晶體的激光性能以后, 人們開始探索摻雜 Nd3+的鍺酸鎵鈣(Ca3Ga2Ge4O14,簡稱 CGG)型晶體的激光性能。同一家族中的鍺酸鎵鍶(Sr3Ga2Ge4O14,簡稱 SGG)晶體熔點比LGS 低 100℃,有利于坩堝下降法生長。 坩堝下降法是通過把坩堝從爐內的高溫區域下移到較低溫度區域從而使熔體過冷結晶。采用坩堝下降法可以減少晶體原料組分的揮發,較易生長晶體。本課題采用坩堝下降法生長SGG晶體,研究 SGG晶體以及坩堝下降法的過程,對純 SGG原料和摻雜Nd3+的 SGG原料進行 XRD測試和光譜測試,并進行對比。36054
畢業論文關鍵字: 鍺酸鎵鍶;坩堝下降法;晶體生長
Growth of doped Sr3Ga2Ge4O14 crystals by a modifiedBridgman method
Abstract:Crystal materials are used in many fields. With the development of thetimes, the demand for crystal materials is gradually increasing, so people explore thevariety of crystal and growth methods of the crystal constantly. In 1982,A.A.Kaminsky, a former Soviet Union scientist, was first reported to find the laserproperties of Nd: LGS crystal, people begin to explore Nd3+ doped in the crystals ofthe type of CGG type crystal and their laser performance. The melting point of SGGin the same family was 100℃ lower than that of LGS, which was beneficial for theBridgman method. The Bridgman method is to lower the temperature from thefurnace to the lower temperature region so as to crystallize the melt. The evaporationof some components of raw material can be reduced by using the Bridgman method ,and the crystal can be grown more easily. In This study, the Bridgman method used togrow the SGG crystal, and the process of the growth of SGG crystal will beresearched. Besides, XRD test will be performed to examine the phase structure ofpure SGG powder and Nd:SGG powder, and the laser spectrum of those two will alsobe tested and be compared. 源¥自%六:維;論-文'網=www.aftnzs.live
KeyWords: SGG; the Bridgman method; crystal growth
目錄
1.緒論.1
2.SGG的晶體研究進展2
2.1.SGG的結構2
2.2.SGG的性能3
2.2.1.光學性能.3
2.2.2.壓電性能.3
2.2.3.熱膨脹系數.4
2.2.4.硬度.4
2.3.晶體生長與缺陷4
2.3.1.晶體生長.4
2.3.2.缺陷.5
2.4.摻雜SGG晶體6
3.實驗.8
3.1.SGG原料制備8
3.1.1.SGG測試原料制備.8
3.1.2.SGG生長原料制備.11
3.2.生長純SGG晶體11
3.2.1.籽晶加工.11
3.2.2.晶體生長.13
3.3.摻雜SGG晶體生長16
3.3.1.Nd:SGG粉體制備.16
3.3.2.Nd:SGG晶體生長.18
4.結果與討論.19
4.1.一步法原料XRD衍射分析19
4.2.二步法原料XRD衍射分析20
4.3.1%,2%,5%Nd:SGG粉體的XRD衍射分析.21
4.4.晶體生長結果22
4.5.摻雜SGG粉體發射光譜24
4.6.摻雜SGG粉體的吸收光譜25
5.結論.26
致謝27
參考文獻28
1. 緒論晶體材料可應用于微電子、光電子、通信、照明、航空航天等眾多領域,對于國防建設和國民經濟有著極其重要的作用,集成電路、半導體照明、太陽能、現代通信、激光等領域都是在各類晶體材料的基礎上發展起來的。由于應用領域不斷有新的理論和技術的突破,對晶體材料不斷提出更高的要求,如晶體材料的尺寸、性能、成本等,所以人們通過改善生長工藝、摻雜等手段對晶體材料的性能進行優化和提高,研制出成本更低、性能更優、尺寸更大的晶體材料。伴隨基礎學科的發展、新材料的不斷發現和生長技術的不斷提高,晶體工藝學已逐漸成為一門獨立的分支學科。鍺酸鎵鈣(Ca3Ga2Ge4O14,簡稱 CGG)晶體屬三方晶系,點群32,空間群P321。 摻雜SGG晶體的生長+文獻綜述:http://www.aftnzs.live/cailiao/20190608/34362.html
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